Reactive pulsed laser deposition of WOx layers for SiC-based hydrogen sensor fabrication

V. Yu. Fominski; A. G. Gnedovets; R. I. Romanov; M. V. Demin

doi:10.1117/12.880908

7 February 2011 Reactive pulsed laser deposition of WO_x layers for SiC-based hydrogen sensor fabrication

V. Yu. Fominski, A. G. Gnedovets, R. I. Romanov, M. V. Demin

Proceedings Volume 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies; 799410 (2011) https://doi.org/10.1117/12.880908
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation

Abstract

Peculiarities of WO_x films fabrication by reactive pulsed laser deposition for high temperature Pt-oxide-SiC devices formation were investigated. Deposition of the oxide film was also carried out in such a way as to prevent deposition of droplet fraction (deposition with anti-droplet screen). Direct Simulation Monte Carlo and Kinetic Monte Carlo methods were performed for the deposition processes modeling. The response of the SiC-based devices to hydrogen-containing gases depends on the conditions of deposition of the oxide layer. The best properties were found in the sensor obtained by depositing the scattered flux of W atoms in a shady area on SiC substrate at an oxygen pressure of 10 Pa.

Citation Download Citation

V. Yu. Fominski, A. G. Gnedovets, R. I. Romanov, and M. V. Demin "Reactive pulsed laser deposition of WO_x layers for SiC-based hydrogen sensor fabrication", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799410 (7 February 2011); https://doi.org/10.1117/12.880908

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