Paper
18 February 2011 Crystallization of amorphous silicon films by a Nd:YAG laser and correlated surface morphology
Jing Jin, Lu Huang, Zhijun Yuan, Weimin Shi, Zechun Cao, Jun Zhou
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950E (2011) https://doi.org/10.1117/12.888222
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
The phosphorous (P)-doped hydrogenated amorphous silicon (a-Si:H) thin films were crystallized by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser with laser beam shaping system introduced by a fly-eye lens array. The correlations among crystallization, stress and microstructures with surface morphology during crystallization process can be determined. The increased crystalline fraction (XC) is realized by a considerable stress release. It is observed that the periodic two dimensional grid patterns with the period of about 15 μm are formed at laser energy density (EL) of 740 mJ/cm2 and are very sensitive to the energy density. Further increasing laser energy density to laser ablation can give rise to the irradiation damage on the film with poor crystalline quality and high surface roughness.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Jin, Lu Huang, Zhijun Yuan, Weimin Shi, Zechun Cao, and Jun Zhou "Crystallization of amorphous silicon films by a Nd:YAG laser and correlated surface morphology", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950E (18 February 2011); https://doi.org/10.1117/12.888222
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KEYWORDS
Crystals

Laser crystals

Electroluminescence

Laser energy

Nd:YAG lasers

Silicon films

Laser ablation

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