Photomask Inspection Techniques For Predicting And Maximizing LSI Yield

Mary L. Long; Franklin L. Long

doi:10.1117/12.954845

20 September 1976 Photomask Inspection Techniques For Predicting And Maximizing LSI Yield

Mary L. Long, Franklin L. Long

Proceedings Volume 0080, Developments in Semiconductor Microlithography; (1976) https://doi.org/10.1117/12.954845
Event: Developments in Semiconductor Microlithography, 1976, San Jose, CA, United States

Abstract

The impact of mask quality on wafer yield can hardly be debated. Photomask quality can seriously limit wafer yield, but that limitation can be minimized by effective mask inspection and process control. Techniques for predicting mask limited yield will be presented in conjunction with a discussion of methods for maximizing yields through appropriate process controls.

Citation Download Citation

Mary L. Long and Franklin L. Long "Photomask Inspection Techniques For Predicting And Maximizing LSI Yield", Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); https://doi.org/10.1117/12.954845

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