Paper
12 May 2011 Theoretical study of spur-free dynamic range of a semiconductor resonant cavity linear interferometric intensity modulator
N. Hoghooghi, P. J. Delfyett
Author Affiliations +
Abstract
Simulation results of the performance of a semiconductor resonant cavity linear interferometric intensity modulator are presented. Starting from the rate equations of an injection locked semiconductor laser, the phase response and stable locking range of the injection locked semiconductor laser were obtained. Within the stable locking range without any approximation on the injection power level, effects of the alpha parameter or linewidth enhancement factor of the injection locked semiconductor slave laser, injection ratio, refractive index, and the residual amplitude modulation on the spur-free dynamic range (SFDR) of the modulator are studied.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Hoghooghi and P. J. Delfyett "Theoretical study of spur-free dynamic range of a semiconductor resonant cavity linear interferometric intensity modulator", Proc. SPIE 8054, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications VII, 805404 (12 May 2011); https://doi.org/10.1117/12.886390
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Modulators

Modulation

Phase modulation

Phase shift keying

Semiconductors

Amplitude modulation

RELATED CONTENT


Back to Top