Paper
15 February 2012 Annealing of sol-gel derived metal-oxide thin films by a UV laser pulse train
Jie Zhang
Author Affiliations +
Abstract
Annealing of high-k metal-oxide (TiO2, PZT, and BaTiO3) Sol-Gel derived films by a 266nm laser pulse train was investigated. The TiO2, PZT and BaTiO3 Sol-Gel ink was used as precursors. A high repetition rate DPSS laser (up to 300 kHz, 25ns, 266nm, Coherent AVIA series), which produces an ns pulse train with a pulse delay of 3.3-33.3 ìs, was used as the heat source. The dense, hard and uniform metal-oxide thin films are fabricated on glass and Si substrates, respectively by laser annealing. The films on the glass substrate appear to be ploy-crystalline. The films on the Si substrate appear to be amorphous with nano-crystals embedded. These laser annealed films were characterized by AFM, SEM, TEM and Raman spectroscopy, respectively. The laser heating process was also numerically simulated.
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Jie Zhang "Annealing of sol-gel derived metal-oxide thin films by a UV laser pulse train", Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430C (15 February 2012); https://doi.org/10.1117/12.905691
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Cited by 1 scholarly publication.
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KEYWORDS
Annealing

Ferroelectric materials

Silicon

Glasses

Titanium dioxide

Thin films

Laser processing

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