Paper
11 October 2012 Investigation of the optical and structural properties of WO3 thin films with different sputtering power supplies
Hsi-Chao Chen, Der-Jun Jan, Chien-Han Chen, Kuo-Ting Huang, Yu-Siang Luo, Jia-Min Chen
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Abstract
The purpose of this research was to investigate the optical and structural properties of tungsten oxide (WO3) thin films deposited with three different sputtering power supplies: direct current (DC), DC pulse and radio frequency (RF). These WO3 thin films were deposited on ITO glass and silicon substrate with different gas ratios of oxygen and argon (O2/Ar ratio). WO3 thin film is the role of the electrochromic window was resulted from the advantages of large variation in optical density, high response efficiency, no toxicity and low cost. The experimental results showed that optical intensity increased with the increasing of O2/Ar ratio and all films have the 950cm-1 peak which the bonding of W+6=O in Raman spectra. Hence, the O2/Ar ratio was changed from 0.4 to 0.8 to study the ability of coloring and bleaching for the three different power supplies. Anyways, the WO3 thin films had the best electrochromic property at the O2/Ar ratio of 0.7, 0.6 and 0.6 for DC, DC pulse, and RF, respectively. The transmittances could be over 75% for all films at as-deposited and the deposition rates were between 0.8 and 0.1 Ås-1. Simultaneously, the transmittance variations (ΔT) were 51%, 57% and 53% for DC, DC pulse, and RF power sources at wavelength of 550 nm, respectively. The coloration ability of WO3 thin film deposition with power supply of DC pulse was better than that of the DC and RF.
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Hsi-Chao Chen, Der-Jun Jan, Chien-Han Chen, Kuo-Ting Huang, Yu-Siang Luo, and Jia-Min Chen "Investigation of the optical and structural properties of WO3 thin films with different sputtering power supplies", Proc. SPIE 8486, Current Developments in Lens Design and Optical Engineering XIII, 84861F (11 October 2012); https://doi.org/10.1117/12.929588
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KEYWORDS
Thin films

Sputter deposition

Absorbance

Power supplies

Argon

Oxygen

Raman spectroscopy

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