Optical resistance of GaN and InGaN thin films

Mindaugas Ščiuka; Mantas Dmukauskas; Tomas Grinys; Andrius Melninkaitis

doi:10.1117/12.977451

4 December 2012 Optical resistance of GaN and InGaN thin films

Mindaugas Ščiuka, Mantas Dmukauskas, Tomas Grinys, Andrius Melninkaitis

Proceedings Volume 8530, Laser-Induced Damage in Optical Materials: 2012; 85300Y (2012) https://doi.org/10.1117/12.977451
Event: SPIE Laser Damage, 2012, Boulder, Colorado, United States

Abstract

Group III nitrides are wide band-gap semiconductors which are commonly used in high power and high frequency electronics and optoelectronics. A rapid development of GaN/InGaN devices is in progress however many technological improvements are still demanded. One of them is a convenient formation of electrical contacts attached to appropriate layers. Currently a selective etching step of GaN and InGaN layers is performed by using quite expensive methods such as plasma, chemical-lithographic or electron beam exposure. However, very little research has been done towards investigation of an alternative selective laser etching possibility. Therefore in this work we study optical resistance and damage morphology of thin film GaN and In_xGa_1-xN layers grown on sapphire substrates in the femtosecond regime. Laser induced damage threshold (LIDT) tests were carried out in both S-on-1 and 1-on-1 regimes by exposing samples from front (deposited) and rear (substrate) sides. For optical resistance testing a femtosecond Yb:KGW laser combined with harmonic generator covering near IR spectrum to visible and UV was used. Experimental results of optical resistance dependence on band-gap in In_xGa_1-xN layers with different indium concentration (X up to 22%) are presented. Also detailed morphology study for different laser wavelengths is performed and discussed.

Citation Download Citation

Mindaugas Ščiuka, Mantas Dmukauskas, Tomas Grinys, and Andrius Melninkaitis "Optical resistance of GaN and InGaN thin films", Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85300Y (4 December 2012); https://doi.org/10.1117/12.977451

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available