An InGaSb TFET with high ION/IOFF ratio and low circuit leakage power

Bhargav K. Mamilla; Sooraj Nair; Bahniman Ghosh

doi:10.1117/12.927414

15 October 2012 An InGaSb TFET with high ION/IOFF ratio and low circuit leakage power

Bhargav K. Mamilla, Sooraj Nair, Bahniman Ghosh

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492C (2012) https://doi.org/10.1117/12.927414
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

This paper investigates suitable materials for tunnel FETs (TFETs). TFETs where entire body is made of group III-V and IV elements are simulated. In_1-xGa_xSb TFET with a mole fraction of x=0.75 shows a high I_ON/I_OFF ratio and steeper sub threshold swing. Finally, inverter, buffer, nand and nor gates are simulated using In_0.25Ga_0.75Sb TFET models and are compared with Silicon (Si) MOSFET gates in terms of delay, dynamic and leakage powers. InGaSb TFET gates have less leakage power compared to Si MOSFET gates.

Citation Download Citation

Bhargav K. Mamilla, Sooraj Nair, and Bahniman Ghosh "An InGaSb TFET with high ION/IOFF ratio and low circuit leakage power", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492C (15 October 2012); https://doi.org/10.1117/12.927414

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available