Growth and Characterization of AlxGa1-xN on GaN/Al2O3

Mathaiyan Jayasakthi; Raju Ramesh; Ponnusamy Arivazhagan; Ravi Loganathan; Kandhasamy Prabakaran; Manavaimaran Balaji; Krishnan Baskar

doi:10.1117/12.926904

15 October 2012 Growth and Characterization of AlxGa1-xN on GaN/Al2O3

Mathaiyan Jayasakthi, Raju Ramesh, Ponnusamy Arivazhagan, Ravi Loganathan, Kandhasamy Prabakaran, Manavaimaran Balaji, Krishnan Baskar

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492R (2012) https://doi.org/10.1117/12.926904
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

AlGaN is a promising material to develop UVLEDs and HEMT devices due to the direct wide-band gap material. In the present investigation, AlxGa₁-xN alloys were grown on c-plane sapphire substrate by MOCVD. Al content x was varied in the composition range 0≤×≤0.6. The thickness and Al composition of the AlGaN was determined by HRXRD. The growth rate decreases on increasing the composition of Al. The critical thickness of pseudomorphic AlGaN layer decreases on increasing the composition. Thick layers resulted in cracks and it is important to grow thick layers with high aluminum content free from crack for deep UV LEDs.

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Mathaiyan Jayasakthi, Raju Ramesh, Ponnusamy Arivazhagan, Ravi Loganathan, Kandhasamy Prabakaran, Manavaimaran Balaji, and Krishnan Baskar "Growth and Characterization of AlxGa1-xN on GaN/Al2O3", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492R (15 October 2012); https://doi.org/10.1117/12.926904

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