Gain-switched single-pass Cr:ZnSe amplifier

Sean A. McDaniel; Patrick A. Berry; Kenneth L. Schepler

doi:10.1117/12.2004753

26 March 2013 Gain-switched single-pass Cr:ZnSe amplifier

Sean A. McDaniel, Patrick A. Berry, Kenneth L. Schepler

Proceedings Volume 8599, Solid State Lasers XXII: Technology and Devices; 85990D (2013) https://doi.org/10.1117/12.2004753
Event: SPIE LASE, 2013, San Francisco, California, United States

Abstract

In this paper, we report on building and testing a Cr:ZnSe gain-switched amplifier pumped by a Q-switched Ho:YAG laser and seeded by a continuous wave (CW) tunable Cr:ZnSe laser. A 0.5%-doped, Brewster-cut Ho:YAG rod in an actively Q-switched, folded cavity produced 250 μJ pump pulses at 2.09 μm with pulse widths on the order of 400 ns. The seeded single-pass Cr:ZnSe amplifier exhibited output pulse energy as high as 3.8 μJ at 2.45 μm while pumped at a 10 kHz repetition rate. The gain-switched process showed a peak gain of 380 and an extraction efficiency of 1.5%. The system was tunable from 2160 nm to 2560 nm and had gain of 200 over a 400 nm range.

Citation Download Citation

Sean A. McDaniel, Patrick A. Berry, and Kenneth L. Schepler "Gain-switched single-pass Cr:ZnSe amplifier", Proc. SPIE 8599, Solid State Lasers XXII: Technology and Devices, 85990D (26 March 2013); https://doi.org/10.1117/12.2004753

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