Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

D. J. Rogers; P. Bove; F. Hosseini Teherani; K. Pantzas; T. Moudakir; G. Orsal; G. Patriarche; S. Gautier; A. Ougazzaden; V. E. Sandana; R. McClintock; M. Razeghi

doi:10.1117/12.2010046

18 March 2013 Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

D. J. Rogers, P. Bove, F. Hosseini Teherani, K. Pantzas, T. Moudakir, G. Orsal, G. Patriarche, S. Gautier, A. Ougazzaden, V. E. Sandana, R. McClintock, M. Razeghi

Author Affiliations +

Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862611 (2013) https://doi.org/10.1117/12.2010046
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

InGaN-based p-i-n structures were transferred from sapphire to soda-lime glass substrates using two approaches: (1) laser-lift-off (LLO) and thermo-metallic bonding and (2) chemical lift-off (LLO) by means sacrificial ZnO templates and direct wafer bonding. Both processes were found to function at RT and allow reclaim of the expensive single crystal substrate. Both approaches have also already been demonstrated to work for the wafer-scale transfer of III/V semiconductors. Compared with the industry-standard LLO, the CLO offers the added advantages of a lattice match to InGaN with higher indium contents, no need for an interfacial adhesive layer (which facilitates electrical, optical and thermal coupling), no damaged/contaminated GaN surface layer, simplified sapphire reclaim (GaN residue after LLO may complicate reclaim) and cost savings linked to elimination of the expensive LLO process.

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D. J. Rogers, P. Bove, F. Hosseini Teherani, K. Pantzas, T. Moudakir, G. Orsal, G. Patriarche, S. Gautier, A. Ougazzaden, V. E. Sandana, R. McClintock, and M. Razeghi "Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862611 (18 March 2013); https://doi.org/10.1117/12.2010046

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