A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors

X. L. Nan; Y. Wang; H. T. Dai; S. G. Wang; J. L. Zhao; X. W. Sun

doi:10.1117/12.2002894

18 March 2013 A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors

X. L. Nan, Y. Wang, H. T. Dai, S. G. Wang, J. L. Zhao, X. W. Sun

Author Affiliations +

Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261I (2013) https://doi.org/10.1117/12.2002894
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, p-channel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm²/V s, respectively. The inverter exhibited an obvious inverter response for switching between logic ‘1’ and logic ‘0’, and yielded a high gain of 14 at V_DD = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly p-type), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.

Citation Download Citation

X. L. Nan, Y. Wang, H. T. Dai, S. G. Wang, J. L. Zhao, and X. W. Sun "A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261I (18 March 2013); https://doi.org/10.1117/12.2002894

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