Paper
1 April 2013 Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography
Author Affiliations +
Abstract
With the approach of extreme ultraviolet (EUV) lithography to its realization, practical issues such as the defects of resist patterns have attracted attention. In this study, the defects of line-and-space resist patterns were investigated from the viewpoint of the stochastic effects of chemical reactions. The stochastic effect was expressed using the standard deviation σ of protected unit concentration. To eliminate bridges within ~7 μm length in the line direction, roughly 1-2σ difference is required between average protected unit concentration and dissolution point at the center of space. To eliminate line breaks and severe shrinkages within ~7 μm length in the line direction, roughly 1σ difference is required between average protected unit concentration and dissolution point at the center of resist line pattern.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Kozawa, Julius Joseph Santillan, and Toshiro Itani "Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867913 (1 April 2013); https://doi.org/10.1117/12.2011240
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Stochastic processes

Extreme ultraviolet lithography

Polymers

Extreme ultraviolet

Bridges

Molecules

Scanning electron microscopy

Back to Top