Propagation of surface topography of EUV blank substrate through multilayer and impact of phase defect structure on wafer image

Tsuyoshi Amano; Tsuneo Terasawa

doi:10.1117/12.2011074

1 April 2013 Propagation of surface topography of EUV blank substrate through multilayer and impact of phase defect structure on wafer image

Tsuyoshi Amano, Tsuneo Terasawa

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86791P (2013) https://doi.org/10.1117/12.2011074
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Our recent study reveals that the propagation of a phase defect (PD) from an EUV mask substrate surface through a multilayer does not always propagate in a vertical direction. In this study, to fully understand the propagation model of PDs, two types of defects on a Qz substrate are prepared. One is space patterns fabricated by a mask patterning process followed by an etching giving a cross-sectional angle of 90 degrees. The others are AFM scratched space patterns with their cross-sectional angles as 30 and 60 degrees. After coating, a patterned Qz substrate with a multilayer, propagation of PDs through the multilayer was observed by a TEM. As a result, the TEM images clearly exhibited a tendency that originating from the Qz substrate while the PDs propagated through the multilayer their propagation path was inclined toward the center of the mask. A maximum inclination of this path was found to be 5.9 degrees at a distance of 93 mm away from the mask’s center. The impacts of the inclination angles on the printed images on wafer calculated using a simulator. A phase defect with an inclination angle of one degree corresponded to a positional shift of one nanometer on printed wafer image.

Citation Download Citation

Tsuyoshi Amano and Tsuneo Terasawa "Propagation of surface topography of EUV blank substrate through multilayer and impact of phase defect structure on wafer image", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791P (1 April 2013); https://doi.org/10.1117/12.2011074

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