In-plane integration of VCSEL with photo-detector by using laterally coupled cavities

Hamed Dalir; Fumio Koyama

doi:10.1117/12.2042250

27 February 2014 In-plane integration of VCSEL with photo-detector by using laterally coupled cavities

Hamed Dalir, Fumio Koyama

Proceedings Volume 9001, Vertical-Cavity Surface-Emitting Lasers XVIII; 900108 (2014) https://doi.org/10.1117/12.2042250
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

A novel concept to form a photo-detector integrated VCSELs using transverse-coupled-cavity (TCC) scheme is demonstrated. In our configuration one cavity suppressed by the reverse bias voltage at 1volt, while the other cavity used as a laser. Proton-implantation was used in order to prevent the current leakage. The formation aperture diameter of each cavity gives us multimode and quasi-single mode condition. Our preliminary results on L-I indicate the possibility of continues tracking of photocurrent in the range of 0.7- 10 mA, which is limited by the threshold and saturation level of the laser side cavity.

Citation Download Citation

Hamed Dalir and Fumio Koyama "In-plane integration of VCSEL with photo-detector by using laterally coupled cavities", Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 900108 (27 February 2014); https://doi.org/10.1117/12.2042250

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