Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications

Elena A. Poklonskaya; Daniel Durini; Melanie Jung; Olaf Schrey; Adrian Driewer; Werner Brockherde; Bedrich Hosticka; Holger Vogt

doi:10.1117/12.2051318

15 May 2014 Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications

Elena A. Poklonskaya, Daniel Durini, Melanie Jung, Olaf Schrey, Adrian Driewer, Werner Brockherde, Bedrich Hosticka, Holger Vogt

Author Affiliations +

Proceedings Volume 9141, Optical Sensing and Detection III; 914103 (2014) https://doi.org/10.1117/12.2051318
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

The performance of a fabricated CMOS line sensor based on the lateral drift-field photodiode (LDPD)1 concept is described. A new pixel structure was designed to decrease the charge transfer time across the photoactive area. Synopsys TCAD simulations were performed to design a proper intrinsic lateral drift-field within the pixel. The line sensor was fabricated in the 0.35 μm CMOS technology, and further characterized using a tailored photon-transfer method² and the EMVA 1288 standard³. The basic parameters such as spectral responsivity, photo-response non-uniformity and dark current were measured at fabricated sensor samples. A special attention was paid to charge transfer time characterization⁴ and the evaluation of crosstalk between neighboring pixels – two major concerns attained during the development. It is shown that the electro-optical characteristics of the developed line sensor are comparable to those delivered by CCD line sensors available on the market, which are normally superior in performance compared to their CMOS based counterparts, but offering additional features such as the possibility of time gating, non-destructive readout, and charge accumulation over several cycles: approaches used to enhance the signal-to-noise ratio (SNR) of the sensor output.

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Elena A. Poklonskaya, Daniel Durini, Melanie Jung, Olaf Schrey, Adrian Driewer, Werner Brockherde, Bedrich Hosticka, and Holger Vogt "Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications", Proc. SPIE 9141, Optical Sensing and Detection III, 914103 (15 May 2014); https://doi.org/10.1117/12.2051318

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KEYWORDS

Sensors

CMOS sensors

Electrons

CCD image sensors

Silicon

Diffusion

Charge-coupled devices

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