Single-Step, Positive-Tone, Lift-Off Process Using AZ 5214-E Resist

D. R. Dunbobbin; J. Faguet

doi:10.1117/12.968421

1 January 1988 Single-Step, Positive-Tone, Lift-Off Process Using AZ 5214-E Resist

D. R. Dunbobbin, J. Faguet

Proceedings Volume 0922, Optical/Laser Microlithography; (1988) https://doi.org/10.1117/12.968421
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

A novel technique is proposed to induce a positive tone, lift-off stencil in AZ 5214-E resist. The technique requires a flood exposure to be applied to a film of resist which induces a solubility gradient through the film. The solubility gradient is then reversed by a post exposure bake and is retained after image-wise exposure. The technique is demonstrated with results of image-wise exposures, by contact lithography, from 0.9 and 0.5 micron spacewidths in dark-field chrome masks. Resists profiles are displayed as a function of flood exposure, image-wise exposure and developer normality. Spacewidths in the resist film are plotted as a function of image-wise exposure energy and Gallium Arsenide MESFET structures with 1.0 micron gate-lengths are fabricated using the new process.

Citation Download Citation

D. R. Dunbobbin and J. Faguet "Single-Step, Positive-Tone, Lift-Off Process Using AZ 5214-E Resist", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968421

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