Advances in 808nm high power diode laser bars and single emitters

J. Morales; S. Lehkonen; G. Liu; D. Schleuning; B. Acklin

doi:10.1117/12.2213789

4 March 2016 Advances in 808nm high power diode laser bars and single emitters

J. Morales, S. Lehkonen, G. Liu, D. Schleuning, B. Acklin

Proceedings Volume 9733, High-Power Diode Laser Technology and Applications XIV; 97330T (2016) https://doi.org/10.1117/12.2213789
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

Key applications for 780-830nm high power diode lasers include the pumping of various gas, solid state, and fiber laser media; medical and aesthetic applications including hair removal; direct diode materials processing; and computer-to-plate (CtP) printing. Many of these applications require high brightness fiber coupled beam delivery, in turn requiring high brightness optical output at the bar and chip level. Many require multiple bars per system, with aggregate powers on the order of kWs, placing a premium on high power and high power conversion efficiency. This paper presents Coherent’s recent advances in the production of high power, high brightness, high efficiency bars and chips at 780-830nm. Results are presented for bars and single emitters of various geometries. Performance data is presented demonstrating peak power conversion efficiencies of 63% in CW mode. Reliability data is presented demonstrating <50k hours lifetime for products including 60W 18% fill factor and 80W 28% fill factor conduction cooled bars, and <1e9 shots lifetime for 500W QCW bars.

Citation Download Citation

J. Morales, S. Lehkonen, G. Liu, D. Schleuning, and B. Acklin "Advances in 808nm high power diode laser bars and single emitters", Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 97330T (4 March 2016); https://doi.org/10.1117/12.2213789

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