Paper
14 March 2016 Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells
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Abstract
In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηint i ) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηint i purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηint i under different Φ and found that the data of ηint i versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηint i, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lin Zhu, Masahiro Yoshita, Tetsuya Nakamura, Mitsuru Imaizumi, Changsu Kim, Toshimitsu Mochizuki, Shaoqiang Chen, Yoshihiko Kanemitsu, and Hidefumi Akiyama "Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells", Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 97430U (14 March 2016); https://doi.org/10.1117/12.2212827
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Cited by 4 scholarly publications.
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KEYWORDS
Solar cells

Gallium arsenide

Indium gallium phosphide

Electroluminescence

Multijunction solar cells

External quantum efficiency

Calibration

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