AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Amit Yadav; Ilya E. Titkov; Grigorii S. Sokolovskii; Sergey Yu. Karpov; Vladislav V. Dudelev; Ksenya K. Soboleva; Martin Strassburg; Ines Pietzonka; Hans-Juergen Lugauer; Edik U. Rafailov

doi:10.1117/12.2213344

8 March 2016 AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Amit Yadav, Ilya E. Titkov, Grigorii S. Sokolovskii, Sergey Yu. Karpov, Vladislav V. Dudelev, Ksenya K. Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, Edik U. Rafailov

Author Affiliations +

Proceedings Volume 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX; 97681K (2016) https://doi.org/10.1117/12.2213344
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Efficiency of commercial 620 nm AlGaInP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm² and pulse duration from microsecond down to sub-nanosecond range. To understand the nature of LED efficiency decrease with current, pulse width variation is used. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major factor controlling the LED efficiency reduction at CW and sub-microsecond pumping. The overheating can be effectively avoided by the use of sub-nanosecond current pulses. A direct correlation between the onset of the efficiency decrease and LED overheating is demonstrated.

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Amit Yadav, Ilya E. Titkov, Grigorii S. Sokolovskii, Sergey Yu. Karpov, Vladislav V. Dudelev, Ksenya K. Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, and Edik U. Rafailov "AlGaInP red-emitting light emitting diode under extremely high pulsed pumping", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681K (8 March 2016); https://doi.org/10.1117/12.2213344

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