Paper
5 November 2015 Lifetime of photo-excited carriers in GaAs studied with optical-pump terahertz-probe method
Lei Hou, Lei Yang, Xianjin Shao, Zhiquan Wang, Mengmeng Zhao, Wei Shi
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Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 979538 (2015) https://doi.org/10.1117/12.2210956
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China
Abstract
The ultrafast photoconductive characteristics of GaAs were investigated by the optical-pump terahertz-probe (OPTP) method at room temperature. In our experiment, a significant decrease of the terahertz transmittance has been observed when the time delay between the optical pump pulse and the terahertz probe pulse was adjusted. When the optical excitation occurred on the surface of GaAs, the free carriers increase. Results regressed the experimental curve and obtained the carrier lifetime is 681ps.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Hou, Lei Yang, Xianjin Shao, Zhiquan Wang, Mengmeng Zhao, and Wei Shi "Lifetime of photo-excited carriers in GaAs studied with optical-pump terahertz-probe method", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 979538 (5 November 2015); https://doi.org/10.1117/12.2210956
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KEYWORDS
Gallium arsenide

Terahertz radiation

Free space

Picosecond phenomena

Spectroscopy

Terahertz spectroscopy

Transmittance

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