Electrical properties of Cr-doped Sb2Te3 phase change material

Qing Wang; Bo Liu; Yangyang Xia; Yonghui Zheng; Sannian Song; Yan Cheng; Zhitang Song; Songlin Feng

doi:10.1117/12.2245039

12 October 2016 Electrical properties of Cr-doped Sb₂Te₃ phase change material

Qing Wang, Bo Liu, Yangyang Xia, Yonghui Zheng, Sannian Song, Yan Cheng, Zhitang Song, Songlin Feng

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180H (2016) https://doi.org/10.1117/12.2245039
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

Phase Change Memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase change material, has attracted continuous exploration. Sb₂Te₃ is a high-speed phase change material matrix with low crystallization temperature. Cr-doped Sb₂Te₃ (CST) films with suitable composition have been studied and proved to be a promising novel phase change material with high speed and good thermal stability. In this paper, detailed R_s-T characteristics and Hall characteristics of the CST films are studied. We find that, when more parts of the film crystallizes into the ordered structure, the activation energy for electrical conduction (Eσ) decreases, indicating that the semiconductor property is weakened. And with the increase of Cr-dopants, Eσ of the As-deposited (As-de) amorphous CST films decreases, thus the thermal stability of resistance is improved. Hall results show that Sb₂Te₃ and CST films are all in P-type. For As-de amorphous films, with the increase of Cr-dopants, the carrier mobility decreases all along, while the carrier density decreases at first and then increases. For the crystalline films, with the increase of Cr-dopants, the carrier mobility decreases, while the carrier density increases.

Citation Download Citation

Qing Wang, Bo Liu, Yangyang Xia, Yonghui Zheng, Sannian Song, Yan Cheng, Zhitang Song, and Songlin Feng "Electrical properties of Cr-doped Sb₂Te₃ phase change material", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180H (12 October 2016); https://doi.org/10.1117/12.2245039

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available