High performance compound semiconductor SPAD arrays

Eric S. Harmon; Mikhail Naydenkov; Jared Bowling

doi:10.1117/12.2225112

5 May 2016 High performance compound semiconductor SPAD arrays

Eric S. Harmon, Mikhail Naydenkov, Jared Bowling

Proceedings Volume 9858, Advanced Photon Counting Techniques X; 98580C (2016) https://doi.org/10.1117/12.2225112
Event: SPIE Commercial + Scientific Sensing and Imaging, 2016, Baltimore, MD, United States

Abstract

Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 – 25 microns, with thousands of SPADs per array.

Citation Download Citation

Eric S. Harmon, Mikhail Naydenkov, and Jared Bowling "High performance compound semiconductor SPAD arrays", Proc. SPIE 9858, Advanced Photon Counting Techniques X, 98580C (5 May 2016); https://doi.org/10.1117/12.2225112

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