l.3um InGaAsP/InP DCC Structure Semiconductor Laser

Liu Yi-chun; Zhang Yue-qing; He Sheng-fu; Zhu You-cai

doi:10.1117/12.959698

7 February 1989 l.3um InGaAsP/InP DCC Structure Semiconductor Laser

Liu Yi-chun, Zhang Yue-qing, He Sheng-fu, Zhu You-cai

Proceedings Volume 0987, High Bandwidth Analog Applications of Photonics II; (1989) https://doi.org/10.1117/12.959698
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

By using general LPE technique, the 1.3 um double carrier confine (DCC) structure laser with high Tο value. Composition matching of two active layers, doping concentration and growing condition are strictly controlled. The radiative recombination probability of super hot carriers which are generated by Auger recombination and leaked process from the first active layer is increased, so that the carriers leak into InP clad layer are decreased. Tο of DCC structure InGaAsP/InP semiconductor laser is as high as 150 K in the operating range of 293-343 K. The relationship between spontaneous emission spectrum and injected current density for DCC laser is discussed. The influence of active layers composition matching and thin sandwich layer thickness on the threshold current density and T. are analysed. Far-field pattern of 1.3 um InGaAsP/InP DCC structure laser is calculated by strong coupling method. Experimental data agree with the theoretical results and the FAHP beam divergence Q<30°. The space coherence property of this double active layers DCC waveguide structure laser is good.

Citation Download Citation

Liu Yi-chun, Zhang Yue-qing, He Sheng-fu, and Zhu You-cai "l.3um InGaAsP/InP DCC Structure Semiconductor Laser", Proc. SPIE 0987, High Bandwidth Analog Applications of Photonics II, (7 February 1989); https://doi.org/10.1117/12.959698

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