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5 March 2022 Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Rinat Yapparov, Yi Chao Chow, Cheyenne Lynsky, Feng Wu, Shuji Nakamura, James S. Speck, Saulius Marcinkevicius
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010D (2022) https://doi.org/10.1117/12.2608741
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
V-defects play an important role in carrier recombination in polar InGaN quantum wells (QWs). Here we report a study of V-defects in QWs emitting from 410 to 570 nm performed by time-resolved near-field optical spectroscopy. In V-defect regions, the radiative carrier lifetime is longer and the nonradiative - shorted than in defect free regions, showing strong spatial variations of the internal quantum efficiency (IQE). The areas with the low IQE, however, are limited to regions just above the dislocations (~2% of the total sample area) showing that the nonradiative recombination at dislocations is not a major factor determining the IQE.
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Rinat Yapparov, Yi Chao Chow, Cheyenne Lynsky, Feng Wu, Shuji Nakamura, James S. Speck, and Saulius Marcinkevicius "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010D (5 March 2022); https://doi.org/10.1117/12.2608741
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KEYWORDS
Quantum wells
Indium gallium nitride
Carrier dynamics
Near field scanning optical microscopy
Spectroscopy
X-ray microscopy
X-rays
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