Nowadays, power-independent, compact, and highly environment-sensitive self-powered photoelectrochemical-type photodetectors (PEC−PDs) have lately intrigued intensive interest to realize next-generation optoelectronic systems. Herein, we demonstrate p-AlGaN nanowire-based self-powered solar-blind PEC-PDs. After decorating nanowires with noble metal platinum (Pt), the constructed solar-blind PEC−PDs exhibited excellent responsivity of 45 mA/W, fast response/recovery time of 47/20 ms. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that using AlGaN nanowires with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.
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