Trigonal oxide semiconductor heterostructures

Marius Grundmann

doi:10.1117/12.2617537

5 March 2022 Trigonal oxide semiconductor heterostructures

Marius Grundmann

Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020B (2022) https://doi.org/10.1117/12.2617537
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

We investigate the specifics of trigonal materials and their heterostructures, in particular alpha-phase (corundum phase) alumina and gallia and their alloy alpha-(Al,Ga)2O3. Compared to more common hexagonal semiconductor materials (like group-III nitrides), the symmetry is reduced. Regarding the elastic properties, this leads to the occurrence of shear strains in heteroepitaxy and a difference between a- and m-planes. Particular care must be taken when evaluating Raman scattering for the determination of the Raman tensor; for thin films, also the thickness must be taken into account. Also results on electrical properties will be given.

Conference Presentation

Citation Download Citation

Marius Grundmann "Trigonal oxide semiconductor heterostructures", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020B (5 March 2022); https://doi.org/10.1117/12.2617537

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available