Wafer-scale growth of hexagonal boron nitride passivation layer directly on III-nitride high-electron mobility transistor for radio-frequency operation

Seokho Moon; Jaewon Kim; Jiye Kim; Jong Kyu Kim

doi:10.1117/12.2611507

9 March 2022 Wafer-scale growth of hexagonal boron nitride passivation layer directly on III-nitride high-electron mobility transistor for radio-frequency operation

Seokho Moon, Jaewon Kim, Jiye Kim, Jong Kyu Kim

Author Affiliations +

Proceedings Volume PC12022, Light-Emitting Devices, Materials, and Applications XXVI; PC1202216 (2022) https://doi.org/10.1117/12.2611507
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

Although gallium nitride (GaN)-based electronic devices for next-generation have garnered increasing attention over the last few years, the formation of surface defects, which severely deteriorate device performances, is fundamentally unavoidable and surface passivation is highly desired. Herein, we report the realization of the clean van der Waals passivation layer, 2D hexagonal boron nitride (h-BN), directly grown on AlGaN/GaN HEMT wafer by using Metal-Organic Chemical Vapor Deposition (MOCVD) system. It was found that the hetero-interface between ~2.5 nm-thick h-BN and AlGaN layer is the atomically sharp with very weak van der Waals interaction, observed by state-of-the-art microscopic and spectroscopic analyses in consistent with calculations.The wafer-scale direct growth of atomically-thin-yet-electrically- “thick” h-BN would be very beneficial for miniaturization of not only compound semiconductor devices but also Si-based electronic devices.

Conference Presentation

Citation Download Citation

Seokho Moon, Jaewon Kim, Jiye Kim, and Jong Kyu Kim "Wafer-scale growth of hexagonal boron nitride passivation layer directly on III-nitride high-electron mobility transistor for radio-frequency operation", Proc. SPIE PC12022, Light-Emitting Devices, Materials, and Applications XXVI, PC1202216 (9 March 2022); https://doi.org/10.1117/12.2611507

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