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30 May 2022 Heterogeneously integrated InGaAs/InAlAs SPAD on SOI photonics platform
Jishen Zhang, Haiwen Xu, Gong Zhang, Kian Hua Tan, Satrio Wicaksono, Soon Fatt Yoon, Xiao Gong
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Proceedings Volume PC12089, Advanced Photon Counting Techniques XVI; PC120890F (2022) https://doi.org/10.1117/12.2618732
Event: SPIE Defense + Commercial Sensing, 2022, Orlando, Florida, United States
Abstract
We have demonstrated the first heterogeneous integration of InGaAs/InAlAs single-photon avalanche diodes with Si photonics through a low-temperature die-to-die bonding technique. A triple-mesa structure has been adopted in InGaAs/InAlAs SPADs. The triple-mesa structure avoids surface exposure to the high electric field to suppress the surface effect induced by the surface defects. This structure can also alleviate the electric field crowding at the mesa edges to eliminate the premature breakdown. The bonding process is done using SU-8 as the adhesion layer which has high transmission efficiency at the SWIR regime and a low-curing temperature. Our integrated SPADs exhibit high single-photon detection efficiency of ~22% and a relatively low dark count rate of 8.6 ×10^5 Hz, which are among the best performance reported for InGaAs/InAlAs SPADs, and are approaching that of InGaAs/InP SPADs. High device yield and performance uniformity are also maintained after the bonding process.
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Jishen Zhang, Haiwen Xu, Gong Zhang, Kian Hua Tan, Satrio Wicaksono, Soon Fatt Yoon, and Xiao Gong "Heterogeneously integrated InGaAs/InAlAs SPAD on SOI photonics platform", Proc. SPIE PC12089, Advanced Photon Counting Techniques XVI, PC120890F (30 May 2022); https://doi.org/10.1117/12.2618732
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KEYWORDS
Silicon
Photonics
Silicon photonics
Avalanche photodiodes
Epitaxy
Photonic devices
Photonic integrated circuits
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