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17 March 2023 Laser damage threshold study of ZGP, CSP, GaAs, and GaP
Peter G. Schunemann, Kevin T. Zawilski, Thomas Lobay, Bryan Porth, Michael D. Thomas
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Proceedings Volume PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII; PC124050G (2023) https://doi.org/10.1117/12.2655108
Event: SPIE LASE, 2023, San Francisco, California, United States
Abstract
In this work we compared the laser damage threshold of ZGP, CSP, GaAs, GaP, OP-GaAs, and OP-GaP under identical conditions. ZGP, CSP, GaAs, and GaP samples measuring 4x5x12 mm3 were fabricated from bulk, melt-grown single crystals. Orientation-patterned GaAs and GaP grown by HVPE on MBE templates were fabricated with dimensions of 2x6x12 mm3. All samples were ground and double-side polished together on the same polishing fixture.to achieve identical surface finish, then demounting, cleaned, and anti-reflection coated together (AR @ 2 and 3-5 microns) followed by laser damage testing with typical 2-micron laser parameters of 25 kHz, 75 ns, 30-micron spot.
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Peter G. Schunemann, Kevin T. Zawilski, Thomas Lobay, Bryan Porth, and Michael D. Thomas "Laser damage threshold study of ZGP, CSP, GaAs, and GaP", Proc. SPIE PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII, PC124050G (17 March 2023); https://doi.org/10.1117/12.2655108
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KEYWORDS
Gallium arsenide
Laser damage threshold
Polishing
Crystals
Laser induced damage
Surface finishing
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