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21 March 2023 Electrical characteristics of highly mg-doped AlGaN contact layers for duv leds
Hayata Takahata, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Hianori Ishiguro, Tomoaki Kachi, Rie Iwatsuki, Yoshiki Saito, Koji Okuno, Kengo Nagata
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649923
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We investigated electrical characteristics of the Mg-doped AlGaN contact layers for DUV LEDs. We found that the contact resistances were exponentially increased from 0.14 to 15.1 Ω∙cm2 with an increase of AlN mole fraction from 0.37 to 0.58. Also, the offset voltages were linearly increased from 0.22 to 3.62 V. While the LED with the AlGaN contact showed higher light output power, its operating voltage at 0.5 mA was 0.8 V higher than that with the GaN contact, showing a reasonable agreement with the abovementioned offset voltage. Further decreases of the offset voltage are important to obtain high-efficiency DUV LEDs.
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Hayata Takahata, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Hianori Ishiguro, Tomoaki Kachi, Rie Iwatsuki, Yoshiki Saito, Koji Okuno, and Kengo Nagata "Electrical characteristics of highly mg-doped AlGaN contact layers for duv leds", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649923
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KEYWORDS
Light emitting diodes
Deep ultraviolet
Aluminum nitride
Resistance
Gallium nitride
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