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21 March 2023 Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation
Konstantin Wein, Frank Bertram, Gordon Schmidt, Peter Veit, Jürgen Christen, Samuel Faber, Bernd Witzigmann, Michael Heuken, Thorsten Zweipfenning, Holger Kalisch, Andrei Vescan, Arne Debald
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2646670
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
A lateral p+n GaN junction with a 10 µm drift layer has been characterized by combined Cathodoluminescence (CL) and Electron-Beam-Induced Current (EBIC) measurements performed at different temperatures. A vertical CL linescan across the pn-junction shows the evolution of luminescence in growth direction. The distinct changes of local emission in the space charge region are correlated with temperature dependent EBIC profiles. In particular in the drift zone, a mono-exponential behavior with a large characteristic length was observed. These profiles are correlated to the calculated band profiles for quantifying the evolution of electrical fields in the space charge region and drift zone.
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Konstantin Wein, Frank Bertram, Gordon Schmidt, Peter Veit, Jürgen Christen, Samuel Faber, Bernd Witzigmann, Michael Heuken, Thorsten Zweipfenning, Holger Kalisch, Andrei Vescan, and Arne Debald "Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646670
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KEYWORDS
Gallium nitride
Diffusion
Luminescence
Temperature metrology
Electron microscopes
Excitons
Line scan image sensors
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