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21 March 2023 Strain-compensated InGaN quantum-well red standard/micro-LEDs
Kazuhiro Ohkawa, Pavel Kirilenko, Mohammed A. Najmi, Martin Velazquez-Rizo, Zhe Zhuang, Daisuke Iida
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2647004
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We have developed highly efficient InGaN red LEDs via the strain-compensated InGaN SQW structure. The LED structure is an InGaN single-quantum-well with AlGaN barriers to compensate for the compressive strain in the InGaN well layer. The red LEDs exhibited an EQE of 4.3%, a light output of 1.7 mW, and a wavelength of 621 nm at 20 mA (10 A/cm2) under 2.96 V. We applied the hydrogen passivation method to pixelize the planar-type micro-LEDs and to fabricate the efficient mesa-type micro-LEDs by suppressing the carrier surface recombination.
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Kazuhiro Ohkawa, Pavel Kirilenko, Mohammed A. Najmi, Martin Velazquez-Rizo, Zhe Zhuang, and Daisuke Iida "Strain-compensated InGaN quantum-well red standard/micro-LEDs", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2647004
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KEYWORDS
Indium gallium nitride
Hydrogen
Light emitting diodes
Quantum wells
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