UV-B laser diodes fabricated on lattice relaxed high quality AlGaN templates

Motoaki Iwaya; Sho Iwayama; Tetsuya Takeuchi; Satoshi Kamiyama; Hideto Miyake

doi:10.1117/12.2677284

5 October 2023 UV-B laser diodes fabricated on lattice relaxed high quality AlGaN templates

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12652, UV and Higher Energy Photonics: From Materials to Applications 2023; PC1265208 (2023) https://doi.org/10.1117/12.2677284
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States

Abstract

UV laser diodes have many advantages over existing gas lasers and solid-state lasers, such as compact size, high efficiency, low power consumption, controllable wavelength, and no use of rare noble gases, and are therefore attracting much attention for their practical application. In this presentation, we introduce our AlGaN-based laser diode in the UV-B region (wavelength of 280~315 nm), which has been difficult to realize in the past. Two bottlenecks existed in the realization of this device: the difficulty of realizing a layer structure that simultaneously realizes the formation of a favorable optical cavity and the high carrier density injection required for laser oscillation, and the difficulty of obtaining high-quality AlGaN crystals with low carrier injection that provide a large optical gain. Our group has solved these problems by using a structure with polarized doping in the p-cladding layer and a high-quality lattice-relaxed AlGaN template, and demonstrated laser oscillation by current injection. I would like to discuss the details of these breakthroughs. I would also like to introduce the latest device performance.

Conference Presentation

Citation Download Citation

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, and Hideto Miyake "UV-B laser diodes fabricated on lattice relaxed high quality AlGaN templates", Proc. SPIE PC12652, UV and Higher Energy Photonics: From Materials to Applications 2023, PC1265208 (5 October 2023); https://doi.org/10.1117/12.2677284

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KEYWORDS

Aluminum gallium nitride

Semiconductor lasers

Crystals

Doping

Gas lasers

Noble gases

Optical resonators

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