Presentation
29 September 2023 Nonlinear optical imaging of carrier transport at the semiconductor-insulator interface in organic field effect transistors
Author Affiliations +
Abstract
Electric field induced second harmonic generation (EFISHG) techniques accurately map the electric field in the channel of a thin film transistor and provide insights into mobile charge distribution as well as interface and bulk trapped charge distribution in the semiconductor and dielectric layers. Since the method is sensitive to both mobile and trapped charges, it is valuable for monitoring carrier dynamics in organic field-effect transistors (FETs). Time-resolved EFISHG images from organic FETs yield real-time motion of the carrier dynamics, providing an alternate estimate of contact-free and trap-free carrier mobility.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suchismita Guha "Nonlinear optical imaging of carrier transport at the semiconductor-insulator interface in organic field effect transistors", Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620N (29 September 2023); https://doi.org/10.1117/12.2680840
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KEYWORDS
Field effect transistors

Interfaces

Semiconductors

Organic semiconductors

Optical imaging

Dielectrics

Femtosecond pulse shaping

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