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9 March 2024 Fabrication of deep UV LEDs with a high-quality AlGaN on face-to-face annealed sputter-deposited AlN template
Hideto Miyake, Kenjiro Uesugi, Takao Nakamura
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860G (2024) https://doi.org/10.1117/12.3005277
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
To fabricate deep-ultraviolet(DUV)-LEDs with high efficiency, the crystallinity of AlGaN must be improved, and is significantly influenced by that of the underlying AlN template. The face-to-face annealed sputter-deposited AlN templates (FFA Sp-AlN) on sapphire have achieved screw- and edge-dislocation densities (TDDs) of 10^4 cm^-2 and 10^7cm^-2. Reduction of TDDs in FFA Sp-AlN and surface flattening of AlxGa1−xN grown on the FFA Sp-AlN play important roles to achieve a high external quantum efficiency (EQE). After the MOVPE homoepitaxial growth of AlN, the FFA Sp-AlN exhibits ideally smooth surface morphology. The EQE of the UV-C LED fabricated on FFA Sp-AlN increased with the TDD reduction of the FFA Sp-AlN. Maximum EQE of 8.0% and output power of 6.6 mW at a 20-mA input were achieved with the peak emission wavelength of 263 nm. We also fabricated 230 nm and 236 nm LEDs on the FFA Sp-AlN templates.
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Hideto Miyake, Kenjiro Uesugi, and Takao Nakamura "Fabrication of deep UV LEDs with a high-quality AlGaN on face-to-face annealed sputter-deposited AlN template", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860G (9 March 2024); https://doi.org/10.1117/12.3005277
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KEYWORDS
Light emitting diodes
Aluminum gallium nitride
Quantum annealing
Deep ultraviolet
External quantum efficiency
Fabrication
Crystals
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