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13 March 2024 Design and optimisation of MBE-grown GaAs-based "W"-lasers for O-band applications
Dominic A. Duffy, Igor P. Marko, Matthew Bentley, Andrew R. Marshall, Samir Rihani, Graham Berry, Michael Robertson, John Rawsthorne, Peter Carrington, Stephen J. Sweeney
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Proceedings Volume PC12905, Novel In-Plane Semiconductor Lasers XXIII; PC1290501 (2024) https://doi.org/10.1117/12.3002312
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Type-II GaInAs/GaAsSb “W”-active regions offer the potential for greater control over the temperature sensitivity of semiconductor lasers operating in the near-IR. In this paper we explore the theoretical design space available using “W”-QWs and discuss the interplay between active region design choices and waveguide optimisation, highlighting the importance of simultaneous optimisation in these systems. We demonstrate the molecular beam epitaxy growth of GaAs-based “W”-lasers emitting around 1250 nm, achieving a room temperature threshold current density of 480±10 A/cm². These initial results demonstrate the promising potential of "W"-lasers for energy-efficient O-band applications in data communications networks.
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Dominic A. Duffy, Igor P. Marko, Matthew Bentley, Andrew R. Marshall, Samir Rihani, Graham Berry, Michael Robertson, John Rawsthorne, Peter Carrington, and Stephen J. Sweeney "Design and optimisation of MBE-grown GaAs-based "W"-lasers for O-band applications", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC1290501 (13 March 2024); https://doi.org/10.1117/12.3002312
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KEYWORDS
Design and modelling
Emission wavelengths
Laser damage threshold
Mathematical optimization
Near infrared
Photoluminescence
Semiconductor lasers
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