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10 April 2024 DSA materials and processes development for ≤ P24 EUV resist L/S pattern rectification
Eungnak Han, Gurpreet Singh, Tayseer Mahdi, Robert Seidel, Sandra Murcia, Lauren Doyle, Nityan Nair, Nafees Kabir, Sean Pursel, David Shykind, Todd Hoppe, Florian Gstrein
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Proceedings Volume PC12956, Novel Patterning Technologies 2024; PC129560P (2024) https://doi.org/10.1117/12.3012612
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
We present a comprehensive investigation into DSA materials and process development for P24 EUV lithography with the objective of mitigating DSA defects and enhancing the smoothness of DSA-defined patterns. We conduct a comparative assessment of the quality of DSA-rectified patterns between PS-b-PMMA and high Chi BCP. Furthermore, we explore resist planforms other than CAR for creating DSA guiding patterns.
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Eungnak Han, Gurpreet Singh, Tayseer Mahdi, Robert Seidel, Sandra Murcia, Lauren Doyle, Nityan Nair, Nafees Kabir, Sean Pursel, David Shykind, Todd Hoppe, and Florian Gstrein "DSA materials and processes development for ≤ P24 EUV resist L/S pattern rectification", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC129560P (10 April 2024); https://doi.org/10.1117/12.3012612
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KEYWORDS
Directed self assembly
Extreme ultraviolet
Materials processing
Block copolymers
Extreme ultraviolet lithography
Fabrication
Objectives
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