Photonic band gap crystals are being pursued for their great potential to govern the spontaneous emission of excited quantum emitters. Here, we study the radiative decay of excited PbS quantum dot nanocrystals inside 3D photonic band gap crystals made from silicon in the near-infrared. At frequencies just above the band gap, we observe 14x enhanced intensity from quantum dots inside the crystal compared to dots outside, indicative of strongly enhanced emission. Moreover, using time-resolved single photon counting, we observe fast non-exponential decay, which is consistent with probing an ensemble of quantum dots at varying depths in the nanopores, each experiencing a position-dependent enhanced local density of states.
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