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4 October 2024 A quantum-mechanical treatment for 5/2 manganese spin in III-V semiconductors
Julian Zanon, Michael Flatté
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Proceedings Volume PC13119, Spintronics XVII; PC131191A (2024) https://doi.org/10.1117/12.3030616
Event: Nanoscience + Engineering, 2024, San Diego, California, United States
Abstract
Ranging from quantum-computing to sensing applications devices, the control of spin-degree of freedom has been highly desirable in semiconductors physics. In III-V semiconductors (e.g., in GaAs or InSb) this could be achieved with manganese impurities. Manganese forms a complex, where a hole from the host aligns antiferromagnetically with the five half spin of the 3d5 manganese core [1]. In our work, based on previous ESR measurements [1], we show a new pathway to treat the manganese core fully quantum-mechanically and, using an analytical treatment from the effective mass approximation [2], we suggest a coherent manipulation of the spatial structure of a single manganese in bulk III-V semiconductors. [1] J. Schneider, et al., Phys. Rev. Lett. 59, 240 (1997). [2] A. M. Yakunin, et al., Phys. Rev. Lett.92, 216806 (2004). This project has received funding from the European Union’sHorizon 2020 research and innovation programme under the MarieSkłodowska-Curie grant agreement No 956548.
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Julian Zanon and Michael Flatté "A quantum-mechanical treatment for 5/2 manganese spin in III-V semiconductors", Proc. SPIE PC13119, Spintronics XVII, PC131191A (4 October 2024); https://doi.org/10.1117/12.3030616
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KEYWORDS
Manganese
Group III-V semiconductors
Quantum spin
Quantum control
Quantum devices
Quantum measurement
Quantum sensing
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