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2 October 2024 Monolithically integrated terahertz optoelectronics based on quantum well structures
Yifan Zhao, Mona Jarrahi
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Proceedings Volume PC13141, Terahertz Emitters, Receivers, and Applications XV; PC1314104 (2024) https://doi.org/10.1117/12.3028428
Event: Optical Engineering + Applications, 2024, San Diego, California, United States
Abstract
We investigated a new generation of terahertz optoelectronics that can be monolithically integrated using quantum well structures. A first-generation terahertz transceiver based on GaAs/AlGaAs quantum well structures was designed, fabricated and characterized. The transceiver chip includes a semiconductor optical amplifier (SOA) integrated with a p-i-n diode based on the same quantum well structure, enabling both generation and detection of frequency-tunable terahertz radiation in response to a heterodyning optical pump beam with a terahertz beat frequency. This structure can be directly transferred to InP based material system working at telecom wavelengths. The optical source can be integrated on the same substrate along with optical intensity/phase modulators, paving the way for fully integrated terahertz imaging, spectroscopy, and communication systems.
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Yifan Zhao and Mona Jarrahi "Monolithically integrated terahertz optoelectronics based on quantum well structures", Proc. SPIE PC13141, Terahertz Emitters, Receivers, and Applications XV, PC1314104 (2 October 2024); https://doi.org/10.1117/12.3028428
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KEYWORDS
Quantum wells
Optoelectronics
Integrated optics
Quantum systems
Terahertz radiation
Biomedical applications
Quantum detection
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