In extreme ultraviolet lithography, multilayer roughness effects are a key contributor to mask-induced pattern roughness. Replicated roughness from the mask substrate results in a spatially dependent phase error that ultimately manifests as aerial image roughness at the wafer. While previous studies have examined the impact of multilayer roughness on line/space patterns, the impact on 2D patterns, i.e., contacts and vias, has not been thoroughly examined. We investigate the impact of multilayer roughness on contact hole patterns for both tantalum and ruthenium absorber materials. We observe that multilayer roughness, and in particular the resulting phase curvature, gives rise to local shifts in best focus consistent with experimentally observed phenomena.