Electro-optic modulator based on Si2N2O substrate

Jiusheng Li; Sailing He

doi:10.1117/1.2155483

1 January 2006 Electro-optic modulator based on Si₂N₂O substrate

Jiusheng Li, Sailing He

Author Affiliations +

Optical Engineering, Vol. 45, Issue 1, 014603 (January 2006). https://doi.org/10.1117/1.2155483

Abstract

We propose a novel Z-cut lithium niobate electro-optic modulator based on a Si₂N₂O substrate. The structure is analyzed using the finite element method. The novel modulator with 3-dB optical bandwidth, half-wave voltage, and characteristic impedance at 1.5-µm wavelength are 120 GHz, 3.5 V and 50.2Ω, respectively. The simulation results show that the modulator can achieve wide bandwidth, low half-wave voltage, and a good impedance match. The modulator has good potential for high-speed optical transmission systems.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Jiusheng Li and Sailing He "Electro-optic modulator based on Si₂N₂O substrate," Optical Engineering 45(1), 014603 (1 January 2006). https://doi.org/10.1117/1.2155483

Published: 1 January 2006

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