Etching of a polyethersulfone film using a XeCl laser

Hedieh Pazokian; Mahmoud Mollabashi; Saeid Jelvani; Shahryar Abolhoseini; Jalal Barzin

doi:10.1117/1.3609008

1 August 2011 Etching of a polyethersulfone film using a XeCl laser

Hedieh Pazokian, Mahmoud Mollabashi, Saeid Jelvani, Shahryar Abolhoseini, Jalal Barzin

Author Affiliations +

Optical Engineering, Vol. 50, Issue 8, 084301 (August 2011). https://doi.org/10.1117/1.3609008

Abstract

In this paper laser ablation of a polyethersulfone (PES) film using a XeCl laser was investigated. It was found that the dominant mechanism in the laser ablation of PES is photothermal. An effective absorption coefficient of 6.5 × 10⁴ cm−1 was obtained from fitting the Arrhenius curve with experimental data.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Hedieh Pazokian, Mahmoud Mollabashi, Saeid Jelvani, Shahryar Abolhoseini, and Jalal Barzin "Etching of a polyethersulfone film using a XeCl laser," Optical Engineering 50(8), 084301 (1 August 2011). https://doi.org/10.1117/1.3609008

Published: 1 August 2011

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