Few optoelectronic integrated instruments are available with efficient image characteristics. It is essential to provide a robust optoelectronic instrument for image processing purposes. Image processing based on a graphene optoelectronic instrument is the core of this paper. A graphene layer photodetector with a light-emitting diode (GLPD-LED) is investigated as an optoelectronic device to resolve the difficulties of optoelectronic quantum photodetectors. The resultant image is improved owing to explicit analysis of the devices’ characteristics, such as image modulation, image resolution, and image conversion efficiency. The optimum responses of the considered devices are achieved via parameter optimization of this instrument. The elementary device parameters are the number of graphene layers, thickness of the graphene, and length of GL. The image characteristics of GLPD-LED are evaluated through comparison with an integrated quantum dot photodetector with a light-emitting diode (QDIP-LED). It is noticed that the image resolution of GLPD-LED is higher than that of QDIP-LED due to the lower dark current of GLPD devices. Hence, the estimated images with GLPD-LED have a higher signal-to-noise ratio. Image conversion with proficient brightness can be accomplished by the GLPD-LED instrument. Finally, the zero energy spectrum of the two-dimensional GL diminishes the number of trapped photons. Thus, photon recycling is avoided within graphene-based instruments compared with quantum photodetector-based optoelectronic instruments. In this regard, the image smearing issue is handled with high precision through image processing based on graphene optoelectronic integration. Finally, the GLPD-LED is proved to be a robust optoelectronic instrument for radiation conversion from lower energy to higher ionizing energy.