KEYWORDS: Solar cells, Gallium arsenide, Indium arsenide, Thin film solar cells, Thin films, Indium gallium arsenide, Quantum wells, Aluminum, Amorphous silicon, Control systems
Insensitivity to edge recombination is observed in GaAs-based InAs/InGaAs quantum dots-in-a-well (DWELL) solar
cells by comparing their current-voltage (IV) plot to GaAs control samples. The edge recombination current component
is extracted by analyzing devices of different areas and then compared to DWELL cells of comparable dimensions. The
results demonstrate that GaAs-based solar cells incorporating a DWELL design are relatively insensitive to edge
recombination by suppressing lateral diffusion of carriers in the intrinsic layer, and thus promising for applications that
require small area devices such as concentration or flexible surfaces. Preliminary studies on the integration of these cells
onto flexible surfaces such as Kapton and nanopaper are discussed including weight considerations for all the integrated
materials.
In order to achieve controlled degree of intermixing in selected areas (CISA), SiO2 gratings are checked first to be able to influence the degree of intermixing during high-temperature rapid thermal annealing of InGaAs/GaAs quantum wells. Subsequently, SiO2/MgF2 gratings with different periods are used to cover different parts of MWQ sample and found to be suitable for achieving CISA after only a single annealing procedure.
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