Dr. Alexei L. Bogdanov Profile

Dr. Alexei L. Bogdanov

Technologist at Western Digital

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Publications (13)

SPIE Journal Paper | 7 August 2012

Fabrication of templates with rectangular bits on circular tracks by combining block copolymer directed self-assembly and nanoimprint lithography

Lei Wan, Ricardo Ruiz, He Gao, Kanaiyalal Patel, Jeffery Lille, Gabriel Zeltzer, Elizabeth Dobisz, Alexei Bogdanov, Thomas Albrecht, Paul Nealey

JM3, Vol. 11, Issue 3, 031405, (August 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031405

KEYWORDS: Nanoimprint lithography, Chromium, Reactive ion etching, Lithography, Silicon, Double patterning technology, Electron beam lithography, Polymethylmethacrylate, Magnetism, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Fabrication of templates with rectangular bits on circular tracks by combining block copolymer directed self-assembly and nanoimprint lithography

Lei Wan, Ricardo Ruiz, He Gao, Kanaiyalal Patel, Jeffery Lille, Gabriel Zeltzer, Elizabeth Dobisz, Alexei Bogdanov, Paul Nealey, Thomas Albrecht

Proceedings Volume 8323, 832319 (2012) https://doi.org/10.1117/12.916592

KEYWORDS: Reactive ion etching, Nanoimprint lithography, Chromium, Lithography, Electron beam lithography, Oxygen, Silicon, Magnetism, Double patterning technology, Directed self assembly

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Proceedings Article | 11 January 2008 Paper

SOI waveguide fabrication process development using star coupler scattering loss measurements

K. Yap, J. Lapointe, B. Lamontagne, A. Delâge, A. Bogdanov, S. Janz, B. Syrett

Proceedings Volume 6800, 680014 (2008) https://doi.org/10.1117/12.758968

KEYWORDS: Waveguides, Chromium, Scattering, Stars, Etching, Electron beam lithography, Lithography, Scanning electron microscopy, Silicon, Aluminum

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Proceedings Article | 21 March 2007 Paper

Fabrication of fine pitch gratings by holography, electron-beam lithography, and nano-imprint lithography

Darren Goodchild, Alexei Bogdanov, Simon Wingar, Bill Benyon, Nak Kim, Frank Shepherd

Proceedings Volume 6517, 651734 (2007) https://doi.org/10.1117/12.712212

KEYWORDS: Holography, Electron beam lithography, Lithography, Semiconducting wafers, Reflectivity, Diffraction gratings, Scanning electron microscopy, Manufacturing, Fabrication, Photoresist materials

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Proceedings Article | 1 March 2006 Paper

Monolithically integrated graded-index waveguide input couplers for silicon-photonics

S. Janz, A. Delage, B. Lamontagne, A. Bogdanov, D. Dalacu, D.-X. Xu, K.P. Yap

Proceedings Volume 6125, 61250M (2006) https://doi.org/10.1117/12.648750

KEYWORDS: Waveguides, GRIN lenses, Silicon, Amorphous silicon, Waveguide modes, Polarization, Refractive index, Tolerancing, Wave propagation, Etching

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Proceedings Article | 7 March 2005 Paper

Design of polarization-insensitive components using geometrical and stress-induced birefringence in SOI waveguides

Dan-Xia Xu, Winnie Ye, Alexei Bogdanov, Dan Dalacu, Andre Delage, Pavel Cheben, Siegfried Janz, Boris Lamontagne, Marie-Josee Picard

Proceedings Volume 5730, (2005) https://doi.org/10.1117/12.589158

KEYWORDS: Waveguides, Birefringence, Cladding, Oxides, Silicon, Etching, Polarization, Wave propagation, Refractive index, Solids

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We review the use of the oxide cladding stress induced photoelastic effect to eliminate the modal birefringence in silicon-on-insulator (SOI) ridge waveguide components, and highlight characteristics particular to high index contrast (HIC) systems. The birefringence in planar waveguides has its origin in the electromagnetic boundary conditions at the waveguide boundaries, and can be further modified by the presence of stress in the materials. It is shown that geometrical constraints imposed by different design and fabrication considerations become increasingly difficult to satisfy with decreasing core sizes. On the other hand, with typical stress levels of -100 MPa to -400 MPa (compressive) in SiO₂ used as the upper cladding, the effective indices are altered up to the order of 10^-3 for ridges with heights ranging from 1 μm to 5 μm. We demonstrate that the stress can be effectively used to balance the geometrical birefringence. Birefringence-free operation is achieved for waveguides with otherwise large birefringence by using properly chosen thickness and stress of the upper cladding layer. This allows the waveguide cross-section profiles to be optimized for design criteria other than zero-birefringence. Since the index changes induced by the stress are orders of magnitude smaller than the waveguide core/cladding index contrast, changes in the mode profiles are insignificant and the associated mode mismatch loss is negligible. We study the stress-induced effects in two parallel waveguides of varying spacing, to emulate the condition in directional couplers and ring-resonators. In the arrayed waveguide grating (AWG) demultiplexers fabricated in the SOI platform, we demonstrated the reduction of the birefringence from 1.3x10^-3 (without the upper cladding) to below 1x10^-4 across the spectral band by using a 0.6 μm oxide upper cladding with a stress of -320 MPa (compressive). Design options for relaxed dimensional tolerance and improved coupler performance made available by using stress engineering are discussed.

Proceedings Article | 17 January 2005 Paper

A 100-channel near-infrared SOI waveguide microspectrometer: design and fabrication challenges

Pavel Cheben, Alexei Bogdanov, Andre Delage, Siegfried Janz, Boris Lamontagne, Marie-Josee Picard, Edith Post, Dan-Xia Xu

Proceedings Volume 5644, (2005) https://doi.org/10.1117/12.573895

KEYWORDS: Waveguides, Silicon, Sensors, Actuators, Spectral resolution, Optoelectronics, Etching, Optoelectronic devices, Environmental sensing, Biological and chemical sensing

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Proceedings Article | 20 December 2004 Paper

Graded-index coupler for microphotonic SOI waveguides

Andre Delage, Siegfried Janz, Dan Xu, Dan Dalacu, Boris Lamontagne, Alexei Bogdanov

Proceedings Volume 5577, (2004) https://doi.org/10.1117/12.567264

KEYWORDS: Waveguides, GRIN lenses, Silicon, Plasma enhanced chemical vapor deposition, Optical components, Optical networks, Integrated optics, Photonics, Photonic crystal devices, Refractive index

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Proceedings Article | 4 November 2004 Paper

1.5-µm optical up-conversion: wafer fusion and related issues

Dayan Ban, Hui Luo, Hui-Chun Liu, Anthony SpringThorpe, Zbigniew Wasilewski, Andrew Bezinger, Alexei Bogdanov, Margaret Buchanan

Proceedings Volume 5543, (2004) https://doi.org/10.1117/12.561087

KEYWORDS: Light emitting diodes, Internal quantum efficiency, Doping, Wafer-level optics, Quantum efficiency, Photodetectors, Semiconducting wafers, Imaging devices, Aluminum, CCD cameras

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Proceedings Article | 20 August 2001 Paper

Deep x-ray lithography with the SU-8 resist

Laurence Singleton, Alexei Bogdanov, Serguei Peredkov, Oliver Wilhelmi, Andreas Schneider, Carsten Cremers, Stephan Megtert, Andreas Schmidt

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436647

KEYWORDS: Polymethylmethacrylate, Critical dimension metrology, X-rays, X-ray lithography, Aluminum, Synchrotrons, Scanning electron microscopy, Photomasks, Photons, Calibration

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Although the process of deep x-ray lithography with PMMA achieves good resolution, it requires significant exposure times because of the low sensitivity of PMMA to x-rays. Therefore resist materials, which can achieve high resolution, but which are inherently more sensitive than PMMA, are desirable. Here it is shown, that x-ray exposures of the SU-8 resist can achieve high resolution with substantially reduced exposure times. Irradiation at the synchrotron source of DCI at Lure (Paris) and MAXLAB (Lund, Sweden) demonstrated a reduced exposure time for a 600 micrometers thick SU-8 relative to PMMA. The does needed to obtain standing structures was 30 J/Cm³ for DCI and 52 J/CM³ for MAXLAB. A 600 micrometers thick PMMA resist requires a typical bottom does of 4 kJ/cm³, so Su-8 is considerably more sensitive to x-rays than PMMA. Preliminary critical dimension measurements (CD) of the 600 micrometers SU-8 resist structures have been obtained for the entire height of the structure, which was exposed at DCI. The CD measurements were made in a Scanning Electron Microscope (SEM) using 10 micrometers wide structures, which have a 20micrometers pitch, this being used to calibrate the measurements. These measurements show that the gain in the critical dimension per structure edge is dependent on the bottom dose. Doses of 30 J/cm³ achieved a CD gain per edge of +0.5 micrometers , while doses of 40 J/cm³ Yielded a CD gain per edge of 0.9 micrometers . However, the gain in the CD per edge is critically dependent on the solvent content in the resist. Doses of 40 J/cm³ into a resist with a 2% residual solvent content yielded CD gains per edge of 0.3micrometers . In addition, the dose profile in the resist does not change the CD values significantly. It has been shown that the resolution of the x-ray exposed SU-8 structures compare quite favorable with PMMA, but the exposure time for SU-8 is approximately 100 times less than that for PMMA. This significantly improves throughput for deep x-ray lithography processes.

Proceedings Article | 23 June 2000 Paper

SU-8 negative photoresist for optical mask manufacturing

Alexei Bogdanov

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388289

KEYWORDS: Photomasks, Chromium, Optics manufacturing, Photoresist processing, Etching, Reactive ion etching, Ions, Lithography, Polymers, Critical dimension metrology

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Proceedings Article | 1 August 1991 Paper

Fine undercut control in bilayer PMMA-P(MMA-MAA) resist system for e-beam lithography with submicrometer resolution

Alexei Bogdanov, Eva Andersson

Proceedings Volume 1465, (1991) https://doi.org/10.1117/12.47368

KEYWORDS: Electron beam lithography, Control systems, Polymethylmethacrylate, Electrons, Imaging systems, Metals, Photoresist materials, Photoresist developing, Physics, Process control

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Proceedings Article | 1 June 1990 Paper

Image formation mechanism in PMMA-MAA antracene positive photoresist exposed by pulsed laser and kinetics of its development

Alexei Bogdanov, V. Nikitaev, Andrey Poljakov, V. Tukish, Kamil Valiev, Leonid Velikov, D. Zaroslov

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20138

KEYWORDS: Pulsed laser operation, Photoresist materials, Photoresist developing, Polymers, Molecules, Image acquisition, Photoresist processing, Computer simulations, Human-machine interfaces, Temperature metrology

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Showing 5 of 13 publications

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