Dr. Alireza Yasan Profile

Dr. Alireza Yasan

Electronics Engineer

SPIE Involvement:

Author

Proceedings Article | 19 January 2010 Paper

Hot pixel reduction in CMOS image sensor pixels

Jonathan Yu, David Collins, Alireza Yasan, Sanghoon Bae, Shri Ramaswami

Proceedings Volume 7537, 753704 (2010) https://doi.org/10.1117/12.839118

KEYWORDS: Photodiodes, Image processing, CMOS sensors, Image sensors, TCAD, Silicon, Doping, Computer aided design, Computer simulations, Solid modeling

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Proceedings Article | 28 February 2006 Paper

Solar-blind avalanche photodiodes

Ryan McClintock, Kathryn Minder, Alireza Yasan, Can Bayram, Frank Fuchs, Patrick Kung, Manijeh Razeghi

Proceedings Volume 6127, 61271D (2006) https://doi.org/10.1117/12.660147

KEYWORDS: Avalanche photodetectors, Aluminum, Photodetectors, Gallium, Avalanche photodiodes, Ultraviolet radiation, Sensors, Gallium nitride, Instrument modeling, Aluminum nitride

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Proceedings Article | 25 March 2005 Paper

Back-illuminated solar-blind photodetectors for imaging applications

Ryan McClintock, Alireza Yasan, Kathryn Mayes, Patrick Kung, Manijeh Razeghi

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.597077

KEYWORDS: Staring arrays, Photodetectors, Aluminum, Back illuminated sensors, Ultraviolet radiation, Readout integrated circuits, Gallium, Cameras, Aluminum nitride, Resistance

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Proceedings Article | 25 March 2005 Paper

ZnO thin film templates for GaN-based devices

David Rogers, Ferechteh Hosseini Teherani, Alireza Yasan, Ryan McClintock, Kathryn Mayes, Shaban Darvish, Patrick Kung, Manijeh Razeghi, Guy Garry

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.596912

KEYWORDS: Zinc oxide, Gallium nitride, Light emitting diodes, Thin films, Silicon carbide, Crystals, Thin film devices, Sapphire, Optoelectronic devices, Nitrogen

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Proceedings Article | 25 March 2005 Paper

AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

Alireza Yasan, Ryan McClintock, Kathryn Mayes, Patrick Kung, Manijeh Razeghi

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.597078

KEYWORDS: Light emitting diodes, Aluminum, Deep ultraviolet, Ultraviolet light emitting diodes, Gallium, Electroluminescence, Doping, Aluminum nitride, Diodes, Measurement devices

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Proceedings Article | 6 July 2004 Paper

Growth of deep-UV light-emitting diodes by metalorganic chemical vapor deposition

Alireza Yasan, Ryan McClintock, Kathryn Mayes, Derek Shiell, Shaban Darvish, Patrick Kung, Manijeh Razeghi

Proceedings Volume 5359, (2004) https://doi.org/10.1117/12.529343

KEYWORDS: Ultraviolet light emitting diodes, Diodes, External quantum efficiency, Gallium, Light emitting diodes, Aluminum, Metalorganic chemical vapor deposition, Aluminum nitride, Continuous wave operation

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Proceedings Article | 6 July 2004 Paper

High-quantum-efficiency solar-blind photodetectors

Ryan McClintock, Alireza Yasan, Kathryn Mayes, Derek Shiell, Shaban Darvish, Patrick Kung, Manijeh Razeghi

Proceedings Volume 5359, (2004) https://doi.org/10.1117/12.529348

KEYWORDS: Aluminum, Gallium, Photodetectors, Back illuminated sensors, Magnesium, External quantum efficiency, Ultraviolet radiation, Superlattices, Aluminum nitride, Sensors

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Proceedings Article | 21 May 2002 Paper

Future of AlxGa1-xN materials and device technology for ultraviolet photodetectors

Patrick Kung, Alireza Yasan, Ryan McClintock, Shaban Darvish, Kan Mi, Manijeh Razeghi

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467650

KEYWORDS: Aluminum, Gallium, Superlattices, Photodetectors, PIN photodiodes, External quantum efficiency, Dielectric polarization, Ultraviolet radiation, Back illuminated sensors, Photodiodes

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