CONFERENCE PROCEEDINGS
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Prof. Alois J. Krost
at Otto von Guericke Univ Magdeburg
SPIE Involvement:
Author
Publications (5)
Proceedings Article | 20 February 2007 Paper
Metalorganic vapor phase epitaxy of ZnO: toward p-type conductivity
S. Heinze, A. Dadgar, F. Bertram, A. Krtschil, J. Bläsing, H. Witte, S. Tiefenau, T. Hempel, A. Diez, J. Christen, A. Krost
Proceedings Volume 6474, 647406 (2007) https://doi.org/10.1117/12.715018
KEYWORDS: Zinc oxide, Arsenic, Annealing, Doping, Oxygen, Nitrogen, Zinc, Atomic force microscopy, Crystals, Particle filters
Proceedings Article | 20 February 2007 Paper
Thin film growth of ZnO and its relation to substrate properties
S. Lautenschläger, C. Neumann, S. Graubner, J. Sann, F. Eylert, N. Volbers, B. Meyer, J. Bläsing, A. Krost, F. Bertram, J. Christen
Proceedings Volume 6474, 64740H (2007) https://doi.org/10.1117/12.713685
KEYWORDS: Zinc oxide, Sapphire, Thin films, Annealing, Surface finishing, Luminescence, Gallium nitride, Crystals, Atomic force microscopy, Gallium
Proceedings Article | 21 September 2006 Paper
Epitaxy of GaN LEDs on large substrates: Si or sapphire?
A. Dadgar, C. Hums, A. Diez, F. Schulze, J. Bläsing, A. Krost
Proceedings Volume 6355, 63550R (2006) https://doi.org/10.1117/12.691576
KEYWORDS: Silicon, Light emitting diodes, Sapphire, Gallium nitride, Semiconducting wafers, Patterned sapphire substrate, Indium gallium nitride, Silicon carbide, Reflection, Epitaxy
Proceedings Article | 14 May 2001 Paper
Silicon as a substrate in multiwafer MOVPE GaN technology
Assadullah Alam, Bernd Schineller, Harry Protzmann, Markus Luenenbuerger, Michael Heuken, Michael Bremser, Egbert Woelk, Armin Dadgar, Alois Krost
Proceedings Volume 4278, (2001) https://doi.org/10.1117/12.426846
KEYWORDS: Gallium nitride, Semiconducting wafers, Silicon, Electroluminescence, Sapphire, Silicon carbide, Quantum wells, Light emitting diodes, Atomic force microscopy, Indium gallium nitride
Proceedings Article | 1 March 1991 Paper
Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy
Kurt Hingerl, Andreas Pesek, Helmut Sitter, Alois Krost, Dietrich Zahn, W. Richter, Gotthard Kudlek, Juergen Gutowski
Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24408
KEYWORDS: Gallium arsenide, Epitaxy, Zinc, Selenium, Raman spectroscopy, Interfaces, Luminescence
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