Ms. Anna Kamila Nowak Profile

Anna Kamila Nowak

PhD Student at Wroclaw Univ of Technology

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 30 September 2005 Paper

Relaxation of persistent photoconductivity in Ga-doped Cd1-xMnxTe

E. Placzek-Popko, A. Nowak, J. Szatkowski, A. Hajdusianek, Z. Gumienny, A. Augousti

Proceedings Volume 5957, 59571J (2005) https://doi.org/10.1117/12.623130

KEYWORDS: Cadmium, Manganese, Tellurium, Temperature metrology, Gallium, Semiconductors, Refractive index, Switching, Photons, Light sources

Read Abstract +

Semiconductors containing so-called DX centers exhibit at low temperatures an ability to modify locally a refractive index under illumination. This modification persists due to the metastable character of the centers. As a result at low temperatures persistent photoeffects are observed for the materials. This property suggests the potential application of the materials in optoelectronic devices and an optical memory based on holography. It has been shown that at low temperatures the centers behave like deep defects whereas after photoionization they behave like shallow dopants. This twofold nature also accompanies different localization at the crystal lattice. As a result at low temperatures return to the "dark" ground state is not possible unless the system possesses enough energy. This energy is called the capture barrier. Changes in the refractive index depend on the height of the capture barrier and temperature. Estimation of the barrier is therefore of prime importance for materials possessing DX centers. It was found that a gallium dopant in Cd_1-xMn_xTe exhibits DX-like behaviour. In this paper we report on the capture barrier of gallium doped Cd_0.99Mn_0.01Te. In order to determine the barrier persistent photoconductivity (PPC) decay kinetics were investigated. The kinetics are governed by the transition from a shallow donor state to the deep DX state. The measurements were run within a temperature range from 77K

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years